View std1nb80-1 datasheet:

STD1NB80-1 N - CHANNEL 800V - 16? - 1A - IPAK PowerMESH? MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STD1NB80-1 800 V < 20 ? 1 A TYPICAL R = 16 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 2 DESCRIPTION 1 Using the latest high voltage MESH OVERLAY? IPAK process, STMicroelectronics has designed an TO-251 advanced family of power MOSFETs with (Suffix "-1") outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest R per area, exceptional avalanche DS(on) and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics. APPLICATIONS SWITCH MODE POW