View std2n80- datasheet:

STD2NB80-1 ® N - CHANNEL 800V - 4.6? - 1.9A - IPAK PowerMESH? MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STD2NB80-1 800V < 6.5 ? 1.9 A TYPICAL R = 4.6 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 FOR SMD DPAK VERSION CONTACT 2 SALES OFFICE 1 IPAK DESCRIPTION TO-251 Using the latest high voltage MESH OVERLAY? (Suffix "-1") process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the INTERNAL SCHEMATIC DIAGRAM lowest R per area, exceptional avalanche DS(on) and dv/dt capabilities and unrivalled gate charge and switching cha