View std2nb25 datasheet:

STD2NB25 ® N - CHANNEL 250V - 1.7? - 2A - IPAK/DPAK PowerMESH? MOSFET TYPE VDSS RDS(on) ID STD2NB25 250 V < 2 ? 2 A TYPICAL R = 1.7 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 FOR SMD DPAK VERSION CONTACT 3 2 1 SALES OFFICE 1 DESCRIPTION IPAK DPAK Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an TO-251 TO-252 advanced family of power MOSFETs with (Suffix "-1") (Suffix "T4") outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the INTERNAL SCHEMATIC DIAGRAM lowest R per area, exceptional avalanche DS(on) and dv/dt capabilities and unrivalled gate charge and swi