View std3nb50 datasheet:

STD3NB50 N - CHANNEL 500V - 2.5? - 3A - IPAK/DPAK PowerMESH? MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STD3NB50 500 V < 2.8 ? 3 A TYPICAL R = 2.5 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 3 2 100% AVALANCHE TESTED 3 1 VERY LOW INTRINSIC CAPACITANCES 1 GATE CHARGE MINIMIZED IPAK DPAK TO-251 TO-252 DESCRIPTION (Suffix "-1") (Suffix "T4") Using the latest high voltage MESH OVERLAY? process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest R per area, exceptional avalanche DS(on) and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics. APPLI