View std4nb25 datasheet:

STD4NB25 ? N - CHANNEL 250V - 0.95? - 4A - DPAK PowerMESH? MOSFET TYPE VDSS RDS(on) ID STD4NB25 250 V < 1.1? 4 A TYPICAL R =0.95 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 FOR TROUGH-HOLE VERSION CONTACT SALES OFFICE 1 DESCRIPTION Using the latest high voltage MESH OVERLAY DPAK ? process, STMicroelectronics has designed an TO-252 advanced family of power MOSFETs with (Suffix ”T4”) outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the INTERNAL SCHEMATIC DIAGRAM lowest R per area, exceptional avalanche DS(on) and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATI