View std4nb40 datasheet:

STD4NB40 N - CHANNEL ENHANCEMENT MODE PowerMESH? MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STD4NB40 400 V < 1.8 ? 3.7 A TYPICAL R = 1.47 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 VERY LOW INTRINSIC CAPACITANCES 2 1 GATE CHARGE MINIMIZED 1 DESCRIPTION IPAK DPAK Using the latest high voltage MESH OVERLAY? TO-251 TO-252 process, SGS-Thomson has designed an (Suffix ”-1”) (Suffix ”T4”) advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest R per area, exceptional avalanche DS(on) and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics. APPLICATIONS S