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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

stn1hnc60

STN1HNC60 N-CHANNEL 600V - 7? - 0.4A - SOT-223 PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STN1HNC60 600 V < 8 ? 0.4 A 2 TYPICAL RDS(on) = 7? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 NEW HIGH VOLTAGE BENCHMARK 2 GATE CHARGE MINIMIZED 1 DESCRIPTION SOT-223 The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate INTERNAL SCHEMATIC DIAGRAM charge and ruggedness. APPLICATIONS AC ADAPTORS AND BATTERY CHARGERS SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS

Keywords

 stn1hnc60 Datasheet, Design, MOSFET, Power

 stn1hnc60 RoHS, Compliant, Service, Triacs, Semiconductor

 stn1hnc60 Database, Innovation, IC, Electricity

 

 
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