View stn1nb80 datasheet:

STN1NB80 ® N - CHANNEL 800V - 16 ? - 0.2A - SOT-223 PowerMESH? MOSFET TYPE V R I DSS DS(on) D STN1NB80 800 V < 20 ? 0.2 A TYPICAL R = 16 ? DS(on) 2 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES 3 GATE CHARGE MINIMIZED 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY? SOT-223 process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest R per area, exceptional avalanche DS(on) and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics. APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) AC ADAPT