View stp10nb20 datasheet:

STP10NB20 STP10NB20FP N - CHANNEL ENHANCEMENT MODE PowerMESH? MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STP10NB20 200 V < 0.40 ? 10 A STP10NB20FP 200 V < 0.40 ? 6 A TYPICAL R = 0.25 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY? process, SGS-Thomson has designed an TO-220 TO-220FP advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics. APPLI