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stp16nb25

STP16NB25 STP16NB25FP ® N - CHANNEL 250V - 0.220? - 16A - TO-220/TO-220FP PowerMESH? MOSFET TYPE VDSS RDS(on) ID STP16NB25 250 V < 0.28 ? 16 A STP16NB25FP 250 V < 0.28 ? 8 A TYPICAL R = 0.220 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an TO-220 TO-220FP advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristic

Keywords

 stp16nb25 Datasheet, Design, MOSFET, Power

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 stp16nb25 Database, Innovation, IC, Electricity

 

 
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