View stp16ne06 datasheet:

STP16NE06 STP16NE06FP ® N - CHANNEL 60V - 0.08 ? - 16A - TO-220/TO-220FP STripFET? POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP16NE06 60 V < 0.100 ? 16 A STP16NE06FP 60 V < 0.100 ? 11 A TYPICAL R = 0.08 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE HIGH dV/dt CAPABILITY 3 3 APPLICATION ORIENTED 2 2 1 1 CHARACTERIZATION DESCRIPTION TO-220 TO-220FP This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on- INTERNAL SCHEMATIC DIAGRAM resistance, rugged avalance characteristics and less critical alignment steps therefore a remark- abl