View stp19nb20 datasheet:

STP19NB20 - STP19NB20FP STB19NB20-1 N-CHANNEL 200V - 0.15? - 19A - TO-220/TO-220FP/I2PAK PowerMESH™ MOSFET TYPE VDSS RDS(on) ID STP19NB20 200 V < 0.18 ? 19 A STP19NB20FP 200 V < 0.18 ? 10 A STB19NB20-1 200 V < 0.18 ? 19 A TYPICAL RDS(on) = 0.15 ? 3 2 EXTREMELY HIGH dv/dt CAPABILITY 1 TO-220 TO-220FP 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 2 1 DESCRIPTION I2PAK Using the latest high voltage MESH OVERLAY™ (Tabless TO-220) process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding INTERNAL SCHEMATIC DIAGRAM performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termi- nation structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt c