View stp2n80 datasheet:

STP2N80 STP2N80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP2N80 800 V < 7 ? 2.4 A STP2N80FI 800 V < 7 ? 1.5 A TYPICAL R = 5 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INPUT CAPACITANCE 2 2 1 1 LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION TO-220 ISOWATT220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) CONSUMER AND INDUSTRIAL LIGHTING INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP2N80 STP2N80FI VDS Drain-source Voltage (VGS = 0) 800 V VDGR Drain- gate Voltage (RGS = 20 k?)800 V VGS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc = 25 oC2.4 1.5 A ID Drain Curren