View stp3n80 datasheet:

STP3NB80 STP3NB80FP ? N - CHANNEL 800V - 4.6? - 2.6A - TO-220/TO-220FP PowerMESH? MOSFET TYPE VDSS RDS(on) ID STP3NB80 800 V < 6.5 ? 2.6 A STP3NB80FP 800 V < 6.5 ? 2.6 A(uu) TYPICAL R = 4.6 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an TO-220 TO-220FP advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics.