View stp3nb100 datasheet:

STP3NB100 STP3NB100FP N-CHANNEL 1000V - 5.3? - 3A TO-220/TO-220FP PowerMesh™ MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP3NB100 1000 V < 6 ? 3 A STP3NB100FP 1000 V < 6 ? 3 A TYPICAL RDS(on) = 5.3? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 VERY LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termi- INTERNAL SCHEMATIC DIAGRAM nation structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris-