View stp3nb60 datasheet:

STP3NB60 STP3NB60FP N - CHANNEL ENHANCEMENT MODE PowerMESH? MOSFET TYPE VDSS RDS(on) ID STP3NB60 600 V <3.6 ? 3.3 A STP3NB60FP 600 V < 3.6 ? 2.2 A TYPICAL R = 3.3 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY? process, SGS-Thomson has designed an TO-220 TO-220FP advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics. APPLICATIONS HIGH CURRENT, HI