View stp3nb90 datasheet:

STP3NB90 STP3NB90FP N-CHANNEL 900V - 4 ? - 3.5 A TO-220/TO-220FP PowerMesh™ MOSFET TYPE VDSS RDS(on) ID Pw STP3NB90 900 V <4.2? 3.5 A 110 W STP3NB90FP 900 V <4.2? 3.5 A 35 W TYPICAL RDS(on) = 4 ? EXTREMELY HIGH dv/dt CAPABILITY 3 100% AVALANCHE TESTED 3 2 2 1 1 GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES TO-220FP TO-220 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termi- INTERNAL SCHEMATIC DIAGRAM nation structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- t