View stp5na80-- datasheet:

STP5NA80FP N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE VDSS RDS(on) ID STP5NA80FP 800 V < 2.4 ? 2.8 A TYPICAL R = 1.8 ? DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 REDUCED THRESHOLD VOLTAGE SPREAD 2 1 DESCRIPTION This series of POWER MOSFETS TO-220FP represents the most advanced high voltage technology. The optmized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR