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stp5nb90

STP5NB90 STP5NB90FP N - CHANNEL 900V - 2.3 ? - 5A - TO-220/TO-220FP PowerMESH? MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP5NB90 900 V < 2.5 ? 5 A STP5NB90FP 900 V < 2.5 5 A ? TYPICAL RDS(on) = 2.3 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an TO-220 TO-220FP advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristi

Keywords

 stp5nb90 Datasheet, Design, MOSFET, Power

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 stp5nb90 Database, Innovation, IC, Electricity

 

 
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