View stp60ne03l-10 datasheet:

STP60NE03L-10 N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE? " POWER MOSFET TYPE VDSS RDS(on) ID STP60NE03L-10 30 V < 0.010 ? 60 A TYPICAL R = 0.007 ? DS(on) EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION 3 2 DESCRIPTION 1 This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" TO-220 strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalance characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC &