View stp60ne06 datasheet:

STP60NE06-16 STP60NE06-16FP N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE? ” POWER MOSFET TYPE VDSS RDS(on) ID STP60NE06-16 60 V < 0.016 ? 60 A STP60NE06-16FP 60 V < 0.016 ? 35 A TYPICAL RDS(on) = 0.013 ? EXCEPTIONAL dV/dt CAPABILTY 100% AVALANCHE TESTED o LOW GATE CHARGE 100 C HIGH dV/dt CAPABILITY 3 3 APPLICATION ORIENTED 2 2 1 1 CHARACTERIZATION DESCRIPTION TO-220 TO220FP This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on- INTERNAL SCHEMATIC DIAGRAM resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturingrepro