View stp6na80 datasheet:

STP6NA80 STP6NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP6NA80 800 V < 1.9 ? 5.7 A STP6NA80FI 800 V < 1.9 ? 3.4 A TYPICAL R = 1.68 ? DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 ISOWATT220 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low R and gate charge, unequalled DS(on) INTERNAL SCHEMATIC DIAGRAM ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE