View stp6nb25 datasheet:

STP6NB25 STP6NB25FP N-CHANNEL 250V - 0.9? - 5A TO-220/TO-220FP PowerMesh™ MOSFET TYPE VDSS RDS(on) ID STP6NB25 250 V < 1.1 ? 5 A STP6NB25FP 250 V < 1.1 ? 5 A TYPICAL RDS(on) = 0.9 ? EXTREMELY HIGH dv/dt CAPABILITY 3 100% AVALANCHE TESTED 3 2 2 1 VERY LOW INTRINSIC CAPACITANCES 1 GATE CHARGE MINIMIZED TO-220FP TO-220 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout INTERNAL SCHEMATIC DIAGRAM coupled with the Company’s proprieraty edge termi- nation structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATI