View stp7nb30 datasheet:

STP7NB30 STP7NB30FP ® N - CHANNEL 300V - 0.75? - 7A - TO-220/TO-220FP PowerMESH? MOSFET TYPE V R I DSS DS(on) D STP7NB30 300 V < 0.90 ? 7 A STP7NB30FP 300 V < 0.90 ? 4 A TYPICAL R = 0.75 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 1 1 DESCRIPTION Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an TO-220 TO-220FP advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche INTERNAL SCHEMATIC DIAGRAM and dv/dt capabilities and unrivalled gate charge and switching characteristics.