View stp80n06-10 datasheet:

STP80N06-10 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STP80N06-10 60 V < 0.010 ? 80 A TYPICAL R = 8.5 m? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCE TESTED HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE HIGH dV/dt RUGGEDNESS 3 2 APPLICATION ORIENTED 1 CHARACTERIZATION TO-220 APPLICATIONS

BUY TRANSISTORS

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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050