View sts1nc60 datasheet:

STS1NC60 N-CHANNEL 600V - 12? - 0.3A - SO-8 PowerMESH™II MOSFET TYPE VDSS RDS(on) ID STS1NC60 600 V < 15 ? 0.3 A TYPICAL RDS(on) = 12? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED DESCRIPTION SO-8 The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate INTERNAL SCHEMATIC DIAGRAM charge and ruggedness. APPLICATIONS AC ADAPTORS AND BATTERY CHARGERS SWITH MODE POWER SUPPLIES (SMPS) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 k?) 600 V VG