View stw10nb60 datasheet:

STW10NB60 ® N - CHANNEL 600V - 0.69? - 10A - TO-247 PowerMESH? MOSFET TYPE VDSS RDS(on) ID STW10NB60 600 V < 0.8 ? 10 A TYPICAL R = 0.69 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of power MOSFETs with TO-247 outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest R per area, exceptional avalanche DS(on) and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics. APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERT