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stw10nb60

STW10NB60 ® N - CHANNEL 600V - 0.69? - 10A - TO-247 PowerMESH? MOSFET TYPE VDSS RDS(on) ID STW10NB60 600 V < 0.8 ? 10 A TYPICAL R = 0.69 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of power MOSFETs with TO-247 outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest R per area, exceptional avalanche DS(on) and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics. APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERT

Keywords

 stw10nb60 Datasheet, Design, MOSFET, Power

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 stw10nb60 Database, Innovation, IC, Electricity

 

 
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