View stw12na50 datasheet:

STW12NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW12NA50 500 V < 0.6 ? 11.6 A TYPICAL R = 0.5 ? DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES 3 GATE GHARGE MINIMIZED 2 1 REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION TO-247 This series of POWER MOSFETS represents the most advanced high voltage technology. The op- timized cell layout coupled with a new proprietary edge termination concur to give the device low R and gate charge, unequalled ruggedness DS(on) and superior switching performance. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPME