View stw12nb60 datasheet:

STW12NB60 N-CHANNEL 600V - 0.5? - 12A TO-247 PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STW12NB60 600V < 0.6? 12 A TYPICAL RDS(on) = 0.5? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES 3 GATE CHARGE MINIMIZED 2 1 TO-247 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout INTERNAL SCHEMATIC DIAGRAM coupled with the Company’s proprieraty edge termi- nation structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELD