View stw13nb60 datasheet:

STW13NB60 STH13NB60FI ? N - CHANNEL 600V - 0.48? - 13A - TO-247/ISOWATT218 PowerMESH? MOSFET TYPE VDSS RDS(on) ID STW13NB60 600 V <0.54 ? 13 A STH13NB60FI 600 V <0.54 8.6 A ? TYPICAL RDS(on) = 0.48 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an TO-247 ISOWATT218 advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteri