View stw14nb50 datasheet:

STW14NB50 ® N-CHANNEL 500V - 0.40 ? - 14A - TO-247 PowerMESH? MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STW14NB50 500 V < 0.45 ? 14 A TYPICAL R = 0.40 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED 3 Using the latest high voltage MESH OVERLAY? 2 1 process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent TO-247 pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest R per area, exceptional avalanche DS(on) and dv/dt capabilities and unrivalled gate charge and switching characteristics. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPME