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stw14nm50

STW14NM50 N-CHANNEL 500V - 0.32? - 14A TO-247 MDmesh™Power MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STW14NM50 500V < 0.35? 14 A TYPICAL RDS(on) = 0.32? HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE 3 2 LOW GATE INPUT RESISTANCE 1 TIGHT PROCESS CONTROL AND HIGH TO-247 MANUFACTORING YIELDS DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain pro- INTERNAL SCHEMATIC DIAGRAM cess with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprierati strip technique yields overall dynamic performance that is signific

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 stw14nm50 Database, Innovation, IC, Electricity

 

 
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