View stw16nb40 datasheet:

STW18NB40 STH18NB40FI ® N-CHANNEL 400V - 0.19? - 18.4A TO-247/ISOWATT218 PowerMESH? MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STW18NB40 400 V < 0.26 ? 18.4 A STH18NB40FI 400 V < 0.26 ? 12.4A TYPICAL R = 0.19 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an TO-247 ISOWATT218 advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and