View stw18nb40 datasheet:

STW18NB40 STH18NB40FI N-CHANNEL 400V - 0.19 ? - 18.4 A TO-247/ISOWATT218 PowerMesh™ MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STW18NB40 400 V < 0.26 ? 18.4 A STH18NB40FI 400 V < 0.26 ? 12.4 A TYPICAL RDS(on) = 0.19 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 2 VERY LOW INTRINSIC CAPACITANCES 2 1 1 GATE CHARGE MINIMIZED ISOWATT218 TO-247 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termi- INTERNAL SCHEMATIC DIAGRAM nation structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and