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stw20nm60

STW20NM60 N-CHANNEL 600V - 0.26? - 20A TO-247 MDmesh™Power MOSFET TYPE VDSS RDS(on) ID STW20NM60 600V < 0.29 ? 20 A TYPICAL RDS(on) = 0.26? HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE 3 CHARGE 2 1 LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH TO-247 MANUFACTURING YIELDS DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain pro- cess with the Company’s PowerMESH™ horizontal INTERNAL SCHEMATIC DIAGRAM layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than

Keywords

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 stw20nm60 Database, Innovation, IC, Electricity

 

 
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