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stw26nm60

STW26NM60 N-CHANNEL 600V - 0.125? - 26A TO-247 Zener-Protected MDmesh™Power MOSFET TYPE VDSS RDS(on) ID STW26NM60 600 V < 0.135 ? 30 A TYPICAL RDS(on) = 0.125? HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TO-247 DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain pro- cess with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low INTERNAL SCHEMATIC DIAGRAM on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

Keywords

 stw26nm60 Datasheet, Design, MOSFET, Power

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