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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

stw47nm50

STW47NM50 N-CHANNEL 500V - 0.065? - 45ATO-247 MDmesh™Power MOSFET ADVANCED DATA TYPE VDSS RDS(on) Rds(on)*Qg ID STW47NM50 500V < 0.085? 5.6 ?*nC 45 A TYPICAL RDS(on) = 0.065? HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE 3 LOW GATE INPUT RESISTANCE 2 1 TIGHT PROCESS CONTROL AND HIGH TO-247 MANUFACTURING YIELDS DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain pro- cess with the Company’s PowerMESH™ horizontal INTERNAL SCHEMATIC DIAGRAM layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance

Keywords

 stw47nm50 Datasheet, Design, MOSFET, Power

 stw47nm50 RoHS, Compliant, Service, Triacs, Semiconductor

 stw47nm50 Database, Innovation, IC, Electricity

 

 
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