View stw47nm60 datasheet:

STW47NM60 N-CHANNEL 600V - 0.075? - 47ATO-247 MDmesh™Power MOSFET ADVANCED DATA TYPE VDSS RDS(on) Rds(on)*Qg ID STW47NM60 600V < 0.09? 7.2 ?*nC 47 A TYPICAL RDS(on) = 0.075? HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE 3 2 1 LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH TO-247 MANUFACTURING YIELDS DESCRIPTION This improved version of MDmesh™ which is based on Multiple Drain process represents the new benchmark in high voltage MOSFETs. The resulting INTERNAL SCHEMATIC DIAGRAM product exhibits even lower on-resistance, impres- sively high dv/dt and excellent avalanche character- istics. The adoption of the Company’s proprietary strip technique yields overall performances that are significantly bet