View stw50n10 datasheet:

STW50N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW50N10 100 V < 0.035 ? 50 A TYPICAL R = 0.027 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE 3 2 APPLICATION ORIENTED 1 CHARACTERIZATION TO-247 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING POWER MOTOR CONTROL DC-DC & DC-AC CONVERTERS SYNCRONOUS RECTIFICATION INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V V 100 V DGR Drain- gate Voltage (RGS = 20 k?) VGS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc = 25 oC50 A ID Drain Current (continuous) at Tc = 100 oC35 A IDM(•) Drain Cu