View stw50nb20 datasheet:

STW50NB20 ® N - CHANNEL 200V - 0.047? - 50A - TO-247 PowerMESH? MOSFET TYPE VDSS RDS(on) ID STW50NB20 200 V < 0.055 ? 50 A TYPICAL R = 0.047 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 2 DESCRIPTION 1 Using the latest high voltage technology, STMicroelectronics has designed an advanced TO-247 family of power Mosfets with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest R (on) per area, exceptional avalanche and DS INTERNAL SCHEMATIC DIAGRAM dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS HIGH CURRENT, HIGH