View stw7nb80- datasheet:

STW7NB80 N - CHANNEL 800V - 1.6? - 6.5A - TO-247 PowerMESH? MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STW7NB80 800 V < 1.9 ? 6.5 A TYPICAL R = 1.6 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 DESCRIPTION 2 1 Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of power MOSFETs with TO-247 outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest R per area, exceptional avalanche DS(on) and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics. APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS)