View stw9nb90 datasheet:

STW9NB90 ® N-CHANNEL 900V - 0.85? - 9.7A - TO-247 PowerMESH? MOSFET TYPE VDSS RDS(on) ID STW9NB90 900 V < 1 ? 9.7 A TYPICAL R = 0.85 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES 3 GATE CHARGE MINIMIZED 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an TO-247 advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche INTERNAL SCHEMATIC DIAGRAM and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS HIGH CURRENT, HI