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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

stw9nc80z

STW9NC80Z N-CHANNEL 800V - 0.82? - 9.4A TO-247 Zener-Protected PowerMESH™III MOSFET TYPE VDSS RDS(on) ID STW9NC80Z 800 V <0.9? 9.4 A TYPICAL RDS(on) = 0.82? EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247 DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsur- passed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capabil- ity with higher ruggedness performance as request- ed by a large variety of single-switch applications. APPLICATIONS SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION WELDING EQUIPMENT ABSOLUTE MAXIMUM

Keywords

 stw9nc80z Datasheet, Design, MOSFET, Power

 stw9nc80z RoHS, Compliant, Service, Triacs, Semiconductor

 stw9nc80z Database, Innovation, IC, Electricity

 

 
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