All Transistors. Equivalents Search

NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN TO-220 MIN h =1000 @ V =4V, I =3A FE CE C COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complementary to TIP105/106/107 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage TIP100 VCBO 60 V 1.Base 2.Collector 3.Emitter TIP101 80 V TIP102 100 V Collector Emitter Voltage TIP100 VCEO 60 V TIP101 80 V TIP102 100 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 8 A Collector Current (Pulse) IC 15 A Base Current (DC) IB 1 A Collector Dissipation ( TA=5 ) PC 2 W Collector Dissipation ( TC=5 ) PC 80 W Junction Temper... See More ⇒