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Order this document MOTOROLA by TIP100/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power NPN TIP100 Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. TIP101* • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc TIP102* VCEO(sus) = 60 Vdc (Min) — TIP100, TIP105 PNP VCEO(sus) = 80 Vdc (Min) — TIP101, TIP106 VCEO(sus) = 100 Vdc (Min) — TIP102, TIP107 TIP105 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc TIP106* VCE(sat) = 2.5 Vdc (Max) @ IC = 8.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIII IIII IIII III • TO–220AB Compact Package TI