View tip110 sam detailed specifications:
POWER MOSFET, IGBT, IC, TRIACS DATABASE
NPN EPITAXIAL TIP110/111/112 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN TO-220 MIN h =1000 @ V =4V, I =1A FE CE C LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complementary to TIP115/116/117 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage TIP110 VCBO 60 V 1.Base 2.Collector 3.Emitter TIP111 80 V TIP112 100 V Collector Emitter Voltage TIP110 VCEO 60 V TIP111 80 V TIP112 100 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 2 A Collector Current (Pulse) IC 4 A Base Current (DC) IB 50 Collector Dissipation ( TA=5 ) PC 2 W Collector Dissipation ( TC=5 ) PC 50 W Junction Temperature TJ 150 Storage Temperature ... See More ⇒
Keywords
tip110 sam Design, MOSFET, Power
tip110 sam RoHS, Compliant, Service, Triacs, Semiconductor
tip110 sam Innovation, IC, Electricity
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