View tip110re datasheet:

Order this document MOTOROLA by TIP110/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power NPN TIP110 Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. TIP111* • High DC Current Gain — hFE = 2500 (Typ) @ IC = 1.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc TIP112* VCEO(sus) = 60 Vdc (Min) — TIP110, TIP115 PNP VCEO(sus) = 80 Vdc (Min) — TIP111, TIP116 TIP115 VCEO(sus) = 100 Vdc (Min) — TIP112, TIP117 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc IIIIIIIIIIIIIIIIIIIIIIII TIP116* • Monolithic Construction with Built–in Base–Emitter Shunt Resistors IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIII IIII III III • TO–220AB Compact Package TIP117* IIIIIIII