View tip115 sam detailed specifications:
POWER MOSFET, IGBT, IC, TRIACS DATABASE
PNP EPITAXIAL TIP115/116/117 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN TO-220 MIN h =1000 @ V = -4V, I = -1A FE CE C LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complementary to TIP110/111/112 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage TIP115 VCBO -60 V 1.Base 2.Collector 3.Emitter TIP116 -80 V TIP117 -100 V Collector Emitter Voltage TIP115 VCEO -60 V TIP116 -80 V TIP117 -100 V Emitter-Base Voltage VEBO -5 V Collector Current (DC) IC -2 A Collector Current (Pulse) IC -4 A Base Current (DC) IB -50 Collector Dissipation ( TA=5 ) PC 2 W Collector Dissipation ( TC=5 ) PC 50 W Junction Temperature TJ 150 Storage T... See More ⇒
Keywords
tip115 sam Design, MOSFET, Power
tip115 sam RoHS, Compliant, Service, Triacs, Semiconductor
tip115 sam Innovation, IC, Electricity
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