View upa802 r34 r35 sot363 datasheet:

PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA802T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS to amplify low noise in the VHF band to the UHF band. (Unit: mm) 2.1±0.1 FEATURES 1.25±0.1 • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Mini Mold Package Adopted • Built-in 2 Transistors (2 ? 2SC4227) ORDERING INFORMATION PART NUMBER QUANTITY PACKING STYLE µPA802T Loose products Embossed tape 8 mm wide. Pin 6 (Q1 (50 PCS) Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) PIN CONFIGURATION (Top View) face to perforation side of the tape. µPA802T-T1