View upa806t t83 sot363 datasheet:

PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA806T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD FEATURES PACKAGE DRAWINGS • Low Noise, High Gain (Unit: mm) • Operable at Low Voltage 2.1±0.1 • Small Feed-back Capacitance 1.25±0.1 Cre = 0.4 pF TYP. • Built-in 2 Transistors (2 ? 2SC4959) ORDERING INFORMATION PART NUMBER QUANTITY PACKING STYLE µPA806T Loose products Embossed tape 8 mm wide. Pin 6 (Q1 (50 PCS) Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape. µPA806T-T1 Taping products (3 KPCS/Reel) PIN CONFIGURATION (Top View) Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.) 6 5 4 ABSOLUTE MAXIMUM RATINGS (TA = 25